4 records found. Displaying records 1 to 4.
Epitaxial lateral overgrowth of m -plane α-Ga 2 O 3 by halide vapor phase epitaxy
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)
;
Takashi Shinohe (author) (Search by this author)
https://orcid.org/0009-0000-5559-1432
(unauthenticated)
- Keyword
- Ga2O3, dislocation, ELO, HVPE
- Date published
- 2025-12-31
- Updated at
- 2025-04-23 12:30:12 +0900
Epitaxial Lateral Overgrowth of c-plane α-Ga2O3 using a stripe mask with ultra-narrow windows
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
;
Takashi Shinohe (author) (Search by this author)FLOSFIA INC.
- Keyword
- Ga2O3, dislocation, HVPE, ELO
- Date published
- 2025-05-19
- Updated at
- 2025-05-21 16:30:09 +0900
Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
- Journal article
- Creator
-
Y. Oshima (author) (Search by this author)
;
;K. Kawara (author) (Search by this author);T. Shinohe (author) (Search by this author);T. Hitora (author) (Search by this author);M. Kasu (author) (Search by this author)S. Fujita (author) (Search by this author)
- Keyword
- α-Ga2O3, HVPE, ELO, dislocation
- Date published
- 2019-02-01
- Updated at
- 2024-01-29 16:48:15 +0900
Visualization of threading dislocations in an α-Ga2O3 epilayer by HCl gas etching
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
;
;Shingo Yagyu (author) (Search by this author)Takashi Shinohe (author) (Search by this author)
- Keyword
- α-Ga2O3, dislocation, etching
- Date published
- 2021-10-19
- Updated at
- 2024-01-22 09:38:31 +0900