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説明:

The compositional and structural investigations of threading dislocations (TDs) in InGaN/GaN multiple quantum wells were carried out using correlative transmission electron microscopy (TEM) and atom probe tomography (APT). The correlative TEM/APT analysis on the same TD reveals that the indium atoms are diffused along the TD and its concentration decreases with distance from the InGaN layer. On the basis of the results, we directly observed that the indium atoms originating from the InGaN layer diffuse toward the epitaxial GaN surface through the TD, and it is considered to have occurred via the pipe diffusion mechanism induced by strain energy relaxation.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

キーワード: InGaN, dislocation, pipe diffusion, atom probe tomography, transmission electron microscopy

刊行年月日: 2022-09-14

出版者: American Chemical Society (ACS)

掲載誌:

• NANO LETTERS (ISSN: 15306984) vol. 22 issue. 17 p. 6930-6935

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4238

公開URL: https://doi.org/10.1021/acs.nanolett.2c01479

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更新時刻: 2024-01-05 22:12:51 +0900

MDRでの公開時刻: 2023-10-04 13:30:15 +0900