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Description:

The compositional and structural investigations of threading dislocations (TDs) in InGaN/GaN multiple quantum wells were carried out using correlative transmission electron microscopy (TEM) and atom probe tomography (APT). The correlative TEM/APT analysis on the same TD reveals that the indium atoms are diffused along the TD and its concentration decreases with distance from the InGaN layer. On the basis of the results, we directly observed that the indium atoms originating from the InGaN layer diffuse toward the epitaxial GaN surface through the TD, and it is considered to have occurred via the pipe diffusion mechanism induced by strain energy relaxation.

Rights:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

Keyword: InGaN, dislocation, pipe diffusion, atom probe tomography, transmission electron microscopy

Date published: 2022-09-14

Publisher: American Chemical Society (ACS)

Journal:

• NANO LETTERS (ISSN: 15306984) vol. 22 issue. 17 p. 6930-6935

Funding:

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4238

First published URL: https://doi.org/10.1021/acs.nanolett.2c01479

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Updated at: 2024-01-05 22:12:51 +0900

Published on MDR: 2023-10-04 13:30:15 +0900