Download file (622KB)
Download as zip (574KB)

コレクション

引用

説明:

We demonstrate that dislocation density in α-Ga2O3 epilayers is remarkably reduced via rapid growth at low temperatures by halide vapor phase epitaxy. The dislocation density was 4 x 108 cm-2 in an α-Ga2O3 epilayer grown on a (0001) sapphire substrate at a high growth rate of 34 μm/h and a low temperature of 463°C. The dislocation density was approximately 1/100 of that in an α-Ga2O3 layer grown with no measures. It is likely that three-dimensional surface morphology formed during the low-temperature rapid growth enhanced the bending of the dislocations to increase the chance of pair annihilation.

権利情報:

• In Copyright
  

  © 2023 The Japan Society of Applied Physics
  
  This is an author-created, un-copyedited version of an article accepted for publication/published
  in Applied Physics Express. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or
  any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1882-0786/acddca .

キーワード: α-Ga2O3, dislocation, HVPE

刊行年月日: 2023-06-01

出版者: IOP Publishing

掲載誌:

• Applied Physics Express (ISSN: 18820778) vol. 16 issue. 6 p. 65501-65501

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4397

公開URL: https://doi.org/10.35848/1882-0786/acddca

関連資料:

その他の識別子:

連絡先:

更新時刻: 2024-06-23 08:30:11 +0900

MDRでの公開時刻: 2024-06-23 08:30:12 +0900