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We demonstrated the epitaxial lateral overgrowth of m-plane α-Ga2O3 by halide vapor phase epitaxy. An m-plane α-Ga2O3/sapphire template with a patterned SiO2 mask was used as the substrate. The growth result on a radial spoke-wheel patterned mask revealed that the lateral growth rate was fastest when the spoke was perpendicular to the 〈11-23〉 direction. In this case, the lateral-to-vertical growth rate ratio (L/V ratio), where L was defined as the increase rate of the width of the line-shaped α-Ga2O3 island, was as large as 5.8. The L/V ratio was greater than that reported for m-direction stripe mask on a-plane α-Ga2O3 by a factor of 3.3, and than that reported for a-direction stripe mask on c- and m-plane α-Ga2O3 by a factor of 13. We then performed the ELO of α-Ga2O3 on a stripe mask (window/mask widths of 2.5 um/7.5 um) along the direction perpendicular to 〈11-23〉. As a result, line-shaped α-Ga2O3 islands with a flat-triangular cross-section selectively nucleated on the window areas, and they coalesced with each other to make a compact film. TEM observation revealed that the dislocation density in the laterally grown area dramatically decreased because the propagation of the dislocations in the seed layer was effectively blocked by the mask.

権利情報:

• Creative Commons BY-NC Attribution-NonCommercial 4.0 International
  

キーワード: Ga2O3, dislocation, ELO, HVPE

刊行年月日: 2025-12-31

出版者: Informa UK Limited

掲載誌:

• Science and Technology of Advanced Materials (ISSN: 14686996) vol. 26 issue. 1

研究助成金:

• Innovative Science and Technology Initiative for Security JPJ004596

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1080/14686996.2025.2485869

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更新時刻: 2025-04-23 12:30:12 +0900

MDRでの公開時刻: 2025-04-23 12:17:46 +0900