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代替タイトル: α-Ga2O3における貫通転位のHClガスエッチによる可視化

説明:

Threading dislocations in a heteroepitaxial α-Ga2O3 film was visualized as etch pits on the surface. We found that etch pits were formed on a c-plane α-Ga2O3 epilayer by HCl gas etching. The epilayer was prepared by using epitaxial lateral overgrowth technique with a stripe mask pattern. The etch pit density was very high in the window region, and much lower in the laterally grown area on the mask. A line of etch pits was observed at a coalesced boundary. Thus, the etch pit density had a clear correlation with the dislocation density. The correspondence between the etch pits and dislocations was confirmed by cross-sectional bright- and dark-field transmission electron microscopy (TEM). This gas-etching technique can clarify the distribution of dislocations in a wide area, which cannot be explored effectively by TEM.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  © 2021. This manuscript version is made available under the CC-BY-NC-ND 4.0 license https://creativecommons.org/licenses/by-nc-nd/4.0/.

キーワード: α-Ga2O3, dislocation, etching

刊行年月日: 2021-10-19

出版者: Elsevier BV

掲載誌:

• JOURNAL OF CRYSTAL GROWTH (ISSN: 00220248) vol. 576 p. 126387-126387

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4355

公開URL: https://doi.org/10.1016/j.jcrysgro.2021.126387

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更新時刻: 2024-01-22 09:38:31 +0900

MDRでの公開時刻: 2024-01-22 12:30:27 +0900