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代替タイトル: <-12-10>ストライプマスクを用いたr面α-Ga2O3の選択横方向成長

説明:

We demonstrated the epitaxial lateral overgrowth of (-1012) (r-plane) α-Ga2O3 using striped mask pattern along <-12-10>. α-Ga2O3 stripes with an asymmetric cross-sectional shape were formed selectively on the windows at the initial growth stage. They grew vertically and laterally to coalesce with each other, and a compact film was achieved. The film surface exhibited wave-like morphology with macro-scale inclined terraces and steps because of the asymmetric cross-sectional stripe shape. Transmission electron microscopy revealed that a domain originated from a window grew toward the inclined c-axis direction so as to cover the adjacent domain after the coalescence. As a result, the dislocations which propagated into the α-Ga2O3 stripe from the seed layer through the window did not reach the top surface because they were buried by the overgrowth of the adjacent domain.

権利情報:

• In Copyright
  

  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Yuichi Oshima et al., J. Appl. Phys. 130, 175304 (2021) and may be found at https://doi.org/10.1063/5.0068097.

キーワード: α-Ga2O3, HVPE, dislocation, ELO

刊行年月日: 2021-11-07

出版者: AIP Publishing

掲載誌:

• JOURNAL OF APPLIED PHYSICS (ISSN: 00218979) vol. 130 issue. 17 p. 175304-175304

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原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1063/5.0068097

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更新時刻: 2024-01-30 16:49:49 +0900

MDRでの公開時刻: 2024-01-31 08:30:17 +0900