Reduction of dislocation density in α-Ga2O3 epilayers via rapid growth at low temperatures by halide vapor phase epitaxy

Journal article

Creator

Yuichi Oshima (author) (Search by this author)

https://orcid.org/0000-0001-8293-4891

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Yuichi Oshima ;

Hiroyuki Ando (author) (Search by this author)

Hiroyuki Ando ;

Takashi Shinohe (author) (Search by this author)

Takashi Shinohe

Keyword

α-Ga2O3, dislocation, HVPE

Date published

2023-06-01

Updated at

2024-06-23 08:30:11 +0900