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We utilized twin network analysis of polycrystalline materials through graph theory to visualize microstructures and examine the behavior of dislocation cluster generation in multicrystalline silicon grown by directional solidification. This approach allows for a rapid and statistical understanding of microstructures and their correlations by representing these features and their changes as network graphs. Our analysis revealed that dislocation clusters are formed at asymmetric Σ27a grain boundaries, which result from a specific twinning process. Gaining this knowledge is expected to assist in identifying grain boundary groups that can minimize the formation of dislocation clusters.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Silicon, dislocation, twin grain boundary, network analysis

刊行年月日: 2025-12-31

出版者: Taylor & Francis

掲載誌:

• Science and Technology of Advanced Materials (ISSN: 14686996) vol. 26 2512703

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5524

公開URL: https://doi.org/10.1080/14686996.2025.2512703

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更新時刻: 2025-07-16 16:14:54 +0900

MDRでの公開時刻: 2025-06-06 16:20:31 +0900