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We utilized twin network analysis of polycrystalline materials through graph theory to visualize microstructures and examine the behavior of dislocation cluster generation in multicrystalline silicon grown by directional solidification. This approach allows for a rapid and statistical understanding of microstructures and their correlations by representing these features and their changes as network graphs. Our analysis revealed that dislocation clusters are formed at asymmetric Σ27a grain boundaries, which result from a specific twinning process. Gaining this knowledge is expected to assist in identifying grain boundary groups that can minimize the formation of dislocation clusters.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: Silicon, dislocation, twin grain boundary, network analysis

Date published: 2025-12-31

Publisher: Taylor & Francis

Journal:

• Science and Technology of Advanced Materials (ISSN: 14686996) vol. 26 2512703

Funding:

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5524

First published URL: https://doi.org/10.1080/14686996.2025.2512703

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Updated at: 2025-07-16 16:14:54 +0900

Published on MDR: 2025-06-06 16:20:31 +0900