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Alternative title: HVPE法によるα-Ga2O3のELO

Description:

We demonstrated epitaxial lateral overgrowth of a-Ga2O3 by halide vapor phase epitaxy. We formed stripe patterned or triangular lattice dot patterned SiO2 masks with window spacing of 5 – 20 um on (0001) a-Ga2O3 / sapphire template, and then a-Ga2O3 islands were regrown selectively on the windows. The islands grew vertically and laterally to coalesce each other. Facet control of a-Ga2O3 islands was achieved by controlling the growth temperature, and it was possible to develop inclined facets by decreasing the temperature. Transmission electron microscopy revealed that the crystal quality of the regrown a-Ga2O3 was significantly improved due to the blocking of dislocations by the mask, and due to the dislocation bending by the inclined facets. The dislocation density in the laterally

Rights:

• Creative Commons BY Attribution 4.0 International
  Copyright 2018 Author(s). This article is distributed under a Creative Commons Attribution (CC BY) License.

Keyword: α-Ga2O3, HVPE, ELO, dislocation

Date published: 2019-02-01

Publisher: AIP Publishing

Journal:

• APL MATERIALS (ISSN: 2166532X) vol. 7 issue. 2 p. 22503-22503

Funding:

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1063/1.5051058

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Updated at: 2024-01-29 16:48:15 +0900

Published on MDR: 2024-01-30 08:30:14 +0900