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代替タイトル: HVPE法によるα-Ga2O3のELO

説明:

We demonstrated epitaxial lateral overgrowth of a-Ga2O3 by halide vapor phase epitaxy. We formed stripe patterned or triangular lattice dot patterned SiO2 masks with window spacing of 5 – 20 um on (0001) a-Ga2O3 / sapphire template, and then a-Ga2O3 islands were regrown selectively on the windows. The islands grew vertically and laterally to coalesce each other. Facet control of a-Ga2O3 islands was achieved by controlling the growth temperature, and it was possible to develop inclined facets by decreasing the temperature. Transmission electron microscopy revealed that the crystal quality of the regrown a-Ga2O3 was significantly improved due to the blocking of dislocations by the mask, and due to the dislocation bending by the inclined facets. The dislocation density in the laterally

権利情報:

• Creative Commons BY Attribution 4.0 International
  

  Copyright 2018 Author(s). This article is distributed under a Creative Commons Attribution (CC BY) License.

キーワード: α-Ga2O3, HVPE, ELO, dislocation

刊行年月日: 2019-02-01

出版者: AIP Publishing

掲載誌:

• APL MATERIALS (ISSN: 2166532X) vol. 7 issue. 2 p. 22503-22503

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1063/1.5051058

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更新時刻: 2024-01-29 16:48:15 +0900

MDRでの公開時刻: 2024-01-30 08:30:14 +0900