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Materials issues and devices of α- and β-Ga2O3
- ジャーナル論文
- 著者
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;Elaheh Ahmadi (author) (この著者で検索)Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science
- キーワード
- Ga2O3, power device, epitaxy
- 刊行年月日
- 2019-10-28
- 更新時刻
- 2024-01-29 15:08:11 +0900
Fabrication of coherent γ-Al2O3/Ga2O3 superlattices on MgAl2O4 substrates
- ジャーナル論文
- 著者
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;Yuji Kato (author) (この著者で検索)Masataka Imura (author) (この著者で検索)National Institute for Materials Science
;
Yoshiko Nakayama (author) (この著者で検索)National Institute for Materials Science
;
Masaki Takeguchi (author) (この著者で検索)National Institute for Materials Science
;
Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science
- キーワード
- Ga2O3, Superlattice
- 刊行年月日
- 2019-06-01
- 更新時刻
- 2024-01-05 22:11:34 +0900
α-Al2O3/Ga2O3 superlattices coherently grown on r-plane sapphire
- ジャーナル論文
- 著者
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Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science
;
;Yuji Kato (author) (この著者で検索)Masataka Imura (author) (この著者で検索)National Institute for Materials Science
;
Yoshiko Nakayama (author) (この著者で検索)National Institute for Materials Science
;
Masaki Takeguchi (author) (この著者で検索)National Institute for Materials Science
- キーワード
- Ga2O3, Superlattice
- 刊行年月日
- 2018-06-01
- 更新時刻
- 2024-01-05 22:12:13 +0900
Epitaxial relationship of NiO on (-102) β-Ga2O3
- ジャーナル論文
- 著者
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Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials
;
Shinji Nakagomi (author) (この著者で検索)Ishinomaki Senshu University Faculty of Science and Engineering
- キーワード
- Ga2O3, NiO, epitaxial relationship
- 刊行年月日
- 2023-12-01
- 更新時刻
- 2024-11-23 16:30:35 +0900
Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate
- ジャーナル論文
- 著者
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Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science
;
Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science
- キーワード
- Ga2O3, HCl gas etching
- 刊行年月日
- 2023-06-01
- 更新時刻
- 2024-06-15 08:30:13 +0900
Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy
- ジャーナル論文
- 著者
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Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science
;
Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science
- キーワード
- Ga2O3, selective area growth
- 刊行年月日
- 2022-07-01
- 更新時刻
- 2024-01-05 22:13:27 +0900
Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography
- ジャーナル論文
- 著者
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Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science
- キーワード
- Ga2O3, lithography
- 刊行年月日
- 2023-01-01
- 更新時刻
- 2024-01-24 11:20:15 +0900
High-performance β-Ga2O3 Schottky barrier diodes and metal-semiconductor field-effect transistors on a high doping level epitaxial layer
- ジャーナル論文
- 著者
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;Qihao Zhang (author) (この著者で検索)Jiangwei Liu (author) (この著者で検索)National Institute for Materials Science
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;Chunming Tu (author) (この著者で検索);Dongyuan Zhai (author) (この著者で検索);Min He (author) (この著者で検索)Jiwu Lu (author) (この著者で検索)
- キーワード
- Ga2O3, Transistor
- 刊行年月日
- 2023-01-03
- 更新時刻
- 2025-01-04 16:30:50 +0900
Ab-initio phonon calculation for Ga2O3 / C2/m (12) / materials id 886
- データセット
- コレクション
- MDR phonon calculation database
- 著者
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Atsushi Togo (author) (この著者で検索)National Institute for Materials Science MaDIS
- キーワード
- Phonon, Ga2O3, C2/m (12)
- 刊行年月日
- 更新時刻
- 2023-05-14 18:54:18 +0900