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代替タイトル: Fabrication of coherent γ-Al2O3/Ga2O3 superlattices on MgAl2O4 substrates

説明:

We succeeded in fabricating 10-period coherent γ Al2O3/Ga2O3 superlattices (SLs) on MgAl2O4 substrates by molecular beam epitaxy. By varying the each layer thickness, we tuned the average Al composition (xave) of the coherent SLs from 0.26 to 0.86, and obtained nearly-lattice-matched SLs to the substrate at xave ~ 0.5. The lattice-matched SLs maintained coherent interfaces up to a period length of 7.2 nm in spite of a large lattice mismatch between the end members. Our results suggest lots of flexibility in designing γ (AlxGa1−x)2O3-based heterostructures for future functional heterojunction devices.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

  © 2019 The Japan Society of Applied Physics
  
  
  This is an author-created, un-copyedited version of an article accepted for publication in Applied Physics Express, Volume 12, Number 6. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or
  any version derived from it. The Version of Record is available online at https://doi.org/10.7567/1882-0786/ab2196.

キーワード: Ga2O3, Superlattice

刊行年月日: 2019-06-01

出版者: IOP Publishing

掲載誌:

• APPLIED PHYSICS EXPRESS (ISSN: 18820778) vol. 12 issue. 6 p. 65503-65503

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4269

公開URL: https://doi.org/10.7567/1882-0786/ab2196

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更新時刻: 2024-01-05 22:11:34 +0900

MDRでの公開時刻: 2023-11-28 13:30:42 +0900