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説明:

β-Ga2O3 has not been patterned using backside-exposure lithography, despite its high potential applications in future power electronics and its transparency to conventional lithography light sources. Here, a patterned metal on a β-Ga2O3 substrate surface was used as an embedded photomask to demonstrate the applicability of backside-exposure lithography to β-Ga2O3 substrates. Self-aligned photoresist patterning, lift-off, and etching processes were demonstrated for an AZ5214E photoresist in both the positive and negative processing modes. The findings suggest that backside-exposure photolithography is a promising fabrication approach for future β-Ga2O3-based devices.

権利情報:

• In Copyright
  © 2023 The Japan Society of Applied Physics
  This is an author-created, un-copyedited version of an article accepted for publication/published in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/acb0b3.

キーワード: Ga2O3, lithography

刊行年月日: 2023-01-01

出版者: IOP Publishing

掲載誌:

• JAPANESE JOURNAL OF APPLIED PHYSICS (ISSN: 00214922) vol. 62 issue. 1 p. 18004-18004

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4259

公開URL: https://doi.org/10.35848/1347-4065/acb0b3

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更新時刻: 2024-01-24 11:20:15 +0900

MDRでの公開時刻: 2024-01-18 08:30:15 +0900