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説明:

We investigated the epitaxial relationship of an electron-beam-evaporated NiO film on a custom-ordered (-102) β-Ga2O3 substrate with a surface orientation rotated by 13.8° around [010] axis relative to the commonly-used (001) substrate. X-Ray diffraction and transmission electron microscopy measurements confirmed that the film was monocrystalline with out-of-plane and in-plane alignments of (110)NiO||(-102)β-Ga2O3 and [-110] NiO||[010]β-Ga2O3, respectively, indicating that the film grew on the substrate while maintaining the orientation of the cubic-close-packed (ccp) oxygen sublattice across the interface. The use of the low-index (110) epitaxial plane within the ccp lattice may be preferred for pn-heterojunctions over the higher-index (331) plane on the (001) β-Ga2O3 substrate.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  © 2023 The Japan Society of Applied Physics
  This is an author-created, un-copyedited version of an article accepted for publication /published in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript orany version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/ad0ac9.

キーワード: Ga2O3, NiO, epitaxial relationship

刊行年月日: 2023-12-01

出版者: IOP Publishing

掲載誌:

• JAPANESE JOURNAL OF APPLIED PHYSICS (ISSN: 00214922) vol. 62 issue. 12 p. 128001-128001

研究助成金:

• the TEPCO Memorial Foundation

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4271

公開URL: https://doi.org/10.35848/1347-4065/ad0ac9

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更新時刻: 2024-11-23 16:30:35 +0900

MDRでの公開時刻: 2024-11-23 16:30:35 +0900