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We investigated the epitaxial relationship of an electron-beam-evaporated NiO film on a custom-ordered (-102) β-Ga2O3 substrate with a surface orientation rotated by 13.8° around [010] axis relative to the commonly-used (001) substrate. X-Ray diffraction and transmission electron microscopy measurements confirmed that the film was monocrystalline with out-of-plane and in-plane alignments of (110)NiO||(-102)β-Ga2O3 and [-110] NiO||[010]β-Ga2O3, respectively, indicating that the film grew on the substrate while maintaining the orientation of the cubic-close-packed (ccp) oxygen sublattice across the interface. The use of the low-index (110) epitaxial plane within the ccp lattice may be preferred for pn-heterojunctions over the higher-index (331) plane on the (001) β-Ga2O3 substrate.

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• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

  © 2023 The Japan Society of Applied Physics
  
  This is an author-created, un-copyedited version of an article accepted for publication /published in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript orany version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/ad0ac9.

Keyword: Ga2O3, NiO, epitaxial relationship

Date published: 2023-12-01

Publisher: IOP Publishing

Journal:

• JAPANESE JOURNAL OF APPLIED PHYSICS (ISSN: 00214922) vol. 62 issue. 12 p. 128001-128001

Funding:

• the TEPCO Memorial Foundation

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4271

First published URL: https://doi.org/10.35848/1347-4065/ad0ac9

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Updated at: 2024-11-23 16:30:35 +0900

Published on MDR: 2024-11-23 16:30:35 +0900