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代替タイトル: α-Al2O3/Ga2O3 superlattices coherently grown on r-plane sapphire

説明:

Ten-period binary α-Al2O3/Ga2O3 superlattices were fabricated on r-plane sapphire substrates by molecular beam epitaxy. By systematic variation of α-Ga2O3 thickness and evaluation through X-ray reflectivity and diffraction measurements and scanning transmission electron microscopy, we verified that the superlattice with α-Ga2O3 thickness up to >1nm had coherent interfaces without misfit dislocation in spite of the large lattice mismatches. This successful fabrication of coherent α-Al2O3/Ga2O3 superlattices will encourage further development of α-(AlxGa1%x)2O3-based heterostructures including superlattices.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

  © 2018 The Japan Society of Applied Physics
  
  
  This is an author-created, un-copyedited version of an article accepted for publication in Applied Physics Express, Volume 11, Number 6. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.7567/APEX.11.065501.

キーワード: Ga2O3, Superlattice

刊行年月日: 2018-06-01

出版者: IOP Publishing

掲載誌:

• APPLIED PHYSICS EXPRESS (ISSN: 18820778) vol. 11 issue. 6 p. 65501-65501

研究助成金:

• 科研費 16K13673

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4268

公開URL: https://doi.org/10.7567/APEX.11.065501

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更新時刻: 2024-01-05 22:12:13 +0900

MDRでの公開時刻: 2023-11-28 13:30:38 +0900