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説明:

We demonstrated selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy on SiO2-masked (001) and (010) β-Ga2O3 substrates. Perfect growth selectivity was achieved under the presence of HCl etching gas in addition to the growth precursors. In both substrate cases, (100) facet dominated the grown shapes owing to its smallest surface energy density. High-aspect-ratio structures having (100) sidewall facets were observed for the stripe windows along [010] and [001] directions on the (001) and (010) substrates, respectively. These structures may be applicable to trenches and fins used for β-Ga2O3-based power devices.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

  © 2022 The Japan Society of Applied Physics
  
  This is an author-created, un-copyedited version of an article accepted for publication/published in Applied Physics Express. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or
  any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1882-0786/ac75c8.

キーワード: Ga2O3, selective area growth

刊行年月日: 2022-07-01

出版者: IOP Publishing

掲載誌:

• Applied Physics Express (ISSN: 18820778) vol. 15 issue. 7 p. 75503-75503

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4266

公開URL: https://doi.org/10.35848/1882-0786/ac75c8

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更新時刻: 2024-01-05 22:13:27 +0900

MDRでの公開時刻: 2023-11-28 13:30:18 +0900