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We demonstrated selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy on SiO2-masked (001) and (010) β-Ga2O3 substrates. Perfect growth selectivity was achieved under the presence of HCl etching gas in addition to the growth precursors. In both substrate cases, (100) facet dominated the grown shapes owing to its smallest surface energy density. High-aspect-ratio structures having (100) sidewall facets were observed for the stripe windows along [010] and [001] directions on the (001) and (010) substrates, respectively. These structures may be applicable to trenches and fins used for β-Ga2O3-based power devices.

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• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

  © 2022 The Japan Society of Applied Physics
  
  This is an author-created, un-copyedited version of an article accepted for publication/published in Applied Physics Express. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or
  any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1882-0786/ac75c8.

Keyword: Ga2O3, selective area growth

Date published: 2022-07-01

Publisher: IOP Publishing

Journal:

• Applied Physics Express (ISSN: 18820778) vol. 15 issue. 7 p. 75503-75503

Funding:

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4266

First published URL: https://doi.org/10.35848/1882-0786/ac75c8

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Updated at: 2024-01-05 22:13:27 +0900

Published on MDR: 2023-11-28 13:30:18 +0900