4 records found. Displaying records 1 to 4.
Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
;
Elaheh Ahmadi (author) (Search by this author) - Keyword
- α-Ga2O3, epitaxy, power device
- Date published
- 2022-12-26
- Updated at
- 2024-01-29 15:45:56 +0900
Materials issues and devices of α- and β-Ga2O3
- Journal article
- Creator
-
;Elaheh Ahmadi (author) (Search by this author)Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, power device, epitaxy
- Date published
- 2019-10-28
- Updated at
- 2024-01-29 15:08:11 +0900
Growth and etching characteristics of (001) β- Ga2O3 by plasma-assisted molecular beam epitaxy
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
;
Elaheh Ahmadi (author) (Search by this author)
https://orcid.org/0000-0002-8330-9366
(unauthenticated)
;
;Stephen Kaun (author) (Search by this author);Feng Wu (author) (Search by this author)James S Speck (author) (Search by this author) - Keyword
- β-Ga2O3, MBE
- Date published
- 2018-01-01
- Updated at
- 2024-01-22 09:42:02 +0900
Composition determination of beta-(AlxGa1-x)2O3 layers coherently grown on (010) beta-Ga2O3 substrates by high-resolution x-ray diffraction
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
;
;Elaheh Ahmadi (author) (Search by this author);Stefan C. Badescu (author) (Search by this author);Feng Wu (author) (Search by this author)James S. Speck (author) (Search by this author)
- Keyword
- β-Ga2O3, composition, atom probe
- Date published
- 2016-06-01
- Updated at
- 2024-01-24 09:26:50 +0900