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We demonstrated the effectiveness of plasma-free HCl gas etching on a SiO2-masked (010) β-Ga2O3 substrate. The etching process proceeded anisotropically in the window areas, resulting in the fabrication of holes or trenches that were surrounded by etching-resistant (100)- and (-101)-faceted sidewalls. When we etched in the striped windows along [001], we were able to create fins and trenches with flat (100)-faceted vertical sidewalls and slightly-rough {310}-faceted inclined bottom corners. The vertical-to-horizontal etching ratio was as high as ~11–14. Our findings indicate that HCl etching is a promising method for fabricating high-aspect-ratio fins/trenches on (010) substrates without causing plasma damage.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  © 2023 The Japan Society of Applied Physic
  This is an author-created, un-copyedited version of an article accepted for publication/published in Applied Physics Express. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1882-0786/acdbb7.

キーワード: Ga2O3, HCl gas etching

刊行年月日: 2023-06-01

出版者: IOP Publishing

掲載誌:

• Applied Physics Express (ISSN: 18820778) vol. 16 issue. 6 p. 66501-66501

研究助成金:

• The Murata Science Foundation

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4267

公開URL: https://doi.org/10.35848/1882-0786/acdbb7

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更新時刻: 2024-06-15 08:30:13 +0900

MDRでの公開時刻: 2024-06-15 08:30:13 +0900