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High-performance β-Ga2O3-based Schottky barrier diodes (SBDs) and metal-semiconductor field-effect transistors (MESFETs) are fabricated on a non-delta-doped high doping level (>1018 cm−3) epitaxial wafer. Their electrical properties and stabilities after annealing at 200–400 °C are investigated. The ON/OFF ratios for all the SBDs are over 108. The ideality factors and Schottky barrier heights for the Au/β-Ga2O3 SBDs with different annealing temperatures range from 1.5 to 2.5 and from 0.8 eV to 1.0 eV, respectively. There are obvious pinch-off and saturation characteristics for the β-Ga2O3 MESFETs. The maximum drain current (ID,max) for the as-fabricated β-Ga2O3 MESFET is 46.8 mA/mm at anode voltage of 2.0 V. They are much higher than the previously reported values of non-delta-doped and nanobelt β-Ga2O3 MESFETs. Threshold voltages for the β-Ga2O3 MESFETs shift to the negative direction with the increase of annealing temperature. This study is meaningful to push forward the development of β-Ga2O3-based electronic devices for practical applications.

Rights:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

Keyword: Ga2O3, Transistor

Date published: 2023-01-03

Publisher: Elsevier BV

Journal:

• JOURNAL OF ALLOYS AND COMPOUNDS (ISSN: 09258388) vol. 939 168732

Funding:

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4248

First published URL: https://doi.org/10.1016/j.jallcom.2023.168732

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Updated at: 2025-01-04 16:30:50 +0900

Published on MDR: 2025-01-04 16:30:50 +0900