High-performance β-Ga2O3 Schottky barrier diodes and metal-semiconductor field-effect transistors on a high doping level epitaxial layer

Qihao Zhang; Jiangwei Liu; Chunming Tu; Dongyuan Zhai; Min He; Jiwu Lu

doi:10.48505/nims.4248

論文 High-performance β-Ga2O3 Schottky barrier diodes and metal-semiconductor field-effect transistors on a high doping level epitaxial layer

Qihao Zhang ; Jiangwei Liu (National Institute for Materials Science) ; Chunming Tu ; Dongyuan Zhai ; Min He ; Jiwu Lu

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Qihao Zhang, Jiangwei Liu, Chunming Tu, Dongyuan Zhai, Min He, Jiwu Lu. High-performance β-Ga2O3 Schottky barrier diodes and metal-semiconductor field-effect transistors on a high doping level epitaxial layer. JOURNAL OF ALLOYS AND COMPOUNDS. 2023, 939 (), 168732. https://doi.org/10.48505/nims.4248

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(abstract)

High-performance β-Ga2O3-based Schottky barrier diodes (SBDs) and metal-semiconductor field-effect transistors (MESFETs) are fabricated on a non-delta-doped high doping level (>1018 cm−3) epitaxial wafer. Their electrical properties and stabilities after annealing at 200–400 °C are investigated. The ON/OFF ratios for all the SBDs are over 108. The ideality factors and Schottky barrier heights for the Au/β-Ga2O3 SBDs with different annealing temperatures range from 1.5 to 2.5 and from 0.8 eV to 1.0 eV, respectively. There are obvious pinch-off and saturation characteristics for the β-Ga2O3 MESFETs. The maximum drain current (ID,max) for the as-fabricated β-Ga2O3 MESFET is 46.8 mA/mm at anode voltage of 2.0 V. They are much higher than the previously reported values of non-delta-doped and nanobelt β-Ga2O3 MESFETs. Threshold voltages for the β-Ga2O3 MESFETs shift to the negative direction with the increase of annealing temperature. This study is meaningful to push forward the development of β-Ga2O3-based electronic devices for practical applications.

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