Book Halide Vapor Phase Epitaxy 2—Heteroepitaxial Growth of α- and ɛ-Ga2O3

大島祐一 SAMURAI ORCID (Research Center for Functional Materials/Optical Materials Field/Optical Single Crystals Group, National Institute for Materials ScienceROR)

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Citation
大島祐一. Halide Vapor Phase Epitaxy 2—Heteroepitaxial Growth of α- and ɛ-Ga2O3. https://doi.org/10.48505/nims.4363
SAMURAI

Alternative title: ハライド気相成長法2 - α- および ε-Ga2O3 のヘテロエピ成長

Description:

(abstract)

αおよびε酸化ガリウムのHVPE成長について解説する。

Rights:

Keyword: Ga2O3, HVPE

Date published: 2020-04-24

Publisher: Springer

Journal:

  • Gallium Oxide: Crystal Growth, Materials Properties, and Devices (Springer)

Funding:

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4363

First published URL: https://link.springer.com/chapter/10.1007/978-3-030-37153-1_11

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Updated at: 2024-01-30 10:29:29 +0900

Published on MDR: 2024-01-30 12:30:20 +0900

Filename Size
Filename GaO-Oshima181210.pdf
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Size 620 KB Detail
Filename Figures181210.pdf (Thumbnail)
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Size 1.32 MB Detail