26 件のレコードが見つかりました。
Novel Mixed-Dimensional hBN-Passivated Silicon Nanowire Reconfigurable Field Effect Transistors: Fabrication and Characterization
- ジャーナル論文
- 著者
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;Sayantan Ghosh (author) (この著者で検索);Muhammad Bilal Khan (author) (この著者で検索);Phanish Chava (author) (この著者で検索)Kenji Watanabe (author) (この著者で検索)National Institute for Materials Science
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Takashi Taniguchi (author) (この著者で検索)National Institute for Materials Science
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;Slawomir Prucnal (author) (この著者で検索);René Hübner (author) (この著者で検索);Thomas Mikolajick (author) (この著者で検索);Artur Erbe (author) (この著者で検索)Yordan M. Georgiev (author) (この著者で検索) - キーワード
- Reconfigurable field effect transistor, silicon nanowire, hexagonal boron nitride
- 刊行年月日
- 2023-08-30
- 更新時刻
- 2025-03-01 08:30:31 +0900
Dielectric strength weakening of hexagonal boron nitride nanosheets under mechanical stress
- ジャーナル論文
- 著者
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;Bingjie Wang (author) (この著者で検索);Chuanli Yu (author) (この著者で検索);Yifan Jiang (author) (この著者で検索);Chong Tian (author) (この著者で検索);Jiamin Tian (author) (この著者で検索);Shuo Li (author) (この著者で検索);Zheng Fang (author) (この著者で検索);Menglan Li (author) (この著者で検索);Weilong Wu (author) (この著者で検索);Zhaohe Dai (author) (この著者で検索)Takashi Taniguchi (author) (この著者で検索)National Institute for Materials Science
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Kenji Watanabe (author) (この著者で検索)National Institute for Materials Science
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;Qing Chen (author) (この著者で検索)Xianlong Wei (author) (この著者で検索)
- キーワード
- hexagonal boron nitride, dielectric strength , mechanical stress
- 刊行年月日
- 2025-08-29
- 更新時刻
- 2026-02-17 08:30:11 +0900
All About the Interface: Do Residual Contaminants at A High‐Quality h‐BN Monolayer Perylene Diimide Interface Cause Charge Trapping?
- ジャーナル論文
- 著者
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;Lukas Renn (author) (この著者で検索);Lisa S. Walter (author) (この著者で検索)Kenji Watanabe (author) (この著者で検索)National Institute for Materials Science
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Takashi Taniguchi (author) (この著者で検索)National Institute for Materials Science
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R. Thomas Weitz (author) (この著者で検索)
- キーワード
- Charge transport, organic semiconducting crystals, hexagonal boron nitride
- 刊行年月日
- 2022-01-29
- 更新時刻
- 2025-02-26 08:30:49 +0900
Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator
- ジャーナル論文
- 著者
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Yosuke Sasama (author) (この著者で検索)
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Takuya Iwasaki (author) (この著者で検索)
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Mohammad Monish (author) (この著者で検索)
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Kenji Watanabe (author) (この著者で検索)
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Takashi Taniguchi (author) (この著者で検索)
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Yamaguchi Takahide (author) (この著者で検索)
- キーワード
- Hydrogen-terminated diamond, Field-effect transistors, hexagonal boron nitride, Self-aligned gate electrode
- 刊行年月日
- 2024-08-26
- 更新時刻
- 2024-09-12 16:30:45 +0900
Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride
- ジャーナル論文
- 著者
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;Håkon I. Røst (author) (この著者で検索);Simon P. Cooil (author) (この著者で検索);Anna Cecilie Åsland (author) (この著者で検索);Jinbang Hu (author) (この著者で検索);Ayaz Ali (author) (この著者で検索)Takashi Taniguchi (author) (この著者で検索)National Institute for Materials Science
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Kenji Watanabe (author) (この著者で検索)National Institute for Materials Science
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;Branson D. Belle (author) (この著者で検索);Bodil Holst (author) (この著者で検索);Jerzy T. Sadowski (author) (この著者で検索);Federico Mazzola (author) (この著者で検索)Justin W. Wells (author) (この著者で検索)
- キーワード
- Quasiparticles, hexagonal boron nitride, many-body effects
- 刊行年月日
- 2023-08-23
- 更新時刻
- 2025-02-14 16:31:03 +0900
Enhanced channel mobility of hexagonal boron nitride/hydrogen-terminated diamond heterojunction field-effect transistor
- ジャーナル論文
- 著者
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Yosuke Sasama (author) (この著者で検索)
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Takuya Iwasaki (author) (この著者で検索)
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Masataka Imura (author) (この著者で検索)
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Kenji Watanabe (author) (この著者で検索)
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Takashi Taniguchi (author) (この著者で検索)
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Yamaguchi Takahide (author) (この著者で検索)
- キーワード
- diamond, field-effect transistors, hexagonal boron nitride
- 刊行年月日
- 2025-10-06
- 更新時刻
- 2025-10-21 16:06:02 +0900
Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures
- ジャーナル論文
- 著者
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Takuya Iwasaki (author) (この著者で検索)National Institute for Materials Science
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;Yoshifumi Morita (author) (この著者で検索)Kenji Watanabe (author) (この著者で検索)National Institute for Materials Science
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Takashi Taniguchi (author) (この著者で検索)National Institute for Materials Science
- キーワード
- bilayer graphene, hexagonal boron nitride, heterostructure, valley Hall effect
- 刊行年月日
- 2024-02-08
- 更新時刻
- 2025-01-10 16:31:45 +0900
High thermal conductivity of high-quality monolayer boron nitride and its thermal expansion
- ジャーナル論文
- 著者
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;Qiran Cai (author) (この著者で検索);Declan Scullion (author) (この著者で検索);Wei Gan (author) (この著者で検索);Alexey Falin (author) (この著者で検索);Shunying Zhang (author) (この著者で検索)Kenji Watanabe (author) (この著者で検索)National Institute for Materials Science
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Takashi Taniguchi (author) (この著者で検索)National Institute for Materials Science
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;Ying Chen (author) (この著者で検索);Elton J. G. Santos (author) (この著者で検索)Lu Hua Li (author) (この著者で検索)
- キーワード
- Thermal conductivity, hexagonal boron nitride, heat dissipation
- 刊行年月日
- 2019-06-07
- 更新時刻
- 2025-02-23 22:51:07 +0900
Midgap radiative centers in carbon-enriched hexagonal boron nitride
- ジャーナル論文
- 著者
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;Maciej Koperski (author) (この著者で検索);Diana Vaclavkova (author) (この著者で検索)Kenji Watanabe (author) (この著者で検索)National Institute for Materials Science
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Takashi Taniguchi (author) (この著者で検索)National Institute for Materials Science
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;Kostya S. Novoselov (author) (この著者で検索)Marek Potemski (author) (この著者で検索)
- キーワード
- Defect centers, hexagonal boron nitride, single-photon sources
- 刊行年月日
- 2020-06-16
- 更新時刻
- 2025-02-28 16:30:43 +0900
Phonon-enhanced nonlinearities in hexagonal boron nitride
- ジャーナル論文
- 著者
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;Jared S. Ginsberg (author) (この著者で検索);M. Mehdi Jadidi (author) (この著者で検索);Jin Zhang (author) (この著者で検索);Cecilia Y. Chen (author) (この著者で検索);Nicolas Tancogne-Dejean (author) (この著者で検索);Sang Hoon Chae (author) (この著者で検索);Gauri N. Patwardhan (author) (この著者で検索);Lede Xian (author) (この著者で検索)Kenji Watanabe (author) (この著者で検索)National Institute for Materials Science
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Takashi Taniguchi (author) (この著者で検索)National Institute for Materials Science
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;James Hone (author) (この著者で検索);Angel Rubio (author) (この著者で検索)Alexander L. Gaeta (author) (この著者で検索)
- キーワード
- Polar crystals, optical nonlinearities, hexagonal boron nitride
- 刊行年月日
- 2023-11-24
- 更新時刻
- 2025-02-11 12:30:15 +0900