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Description:

This work demonstrates the novel concept of a mixed-dimensional reconfigurable field effect transistor (RFET) by combining a one-dimensional (1D) channel material like a silicon (Si) nanowire with a two-dimensional (2D) material as a gate dielectric. An RFET is an innovative device that can be dynamically programmed to perform as either n- or p-FET by applying appropriate gate potentials. In this work, an insulating 2D material, hexagonal boron nitride (hBN) is introduced as a gate dielectric and encapsulation layer around the nanowire in place of a thermally grown or atomic- layer-deposited (ALD) oxide. hBN flake was mechanically exfoliated and transferred onto a silicon nanowire-based RFET device using the dry viscoelastic stamping transfer technique. The thickness of the hBN flakes was investigated by atomic force microscopy and transmission electron microscopy. The ambipolar transfer characteristics of the Si- hBN RFETs with different gating architectures showed a significant improvement in subthreshold swing, p-n on-currents, hysteresis, and on-off ratio (ION/IOFF) due to the encapsulation and passivation of the nanowire with the hBN flake.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: Reconfigurable field effect transistor, silicon nanowire, hexagonal boron nitride

Date published: 2023-08-30

Publisher: American Chemical Society (ACS)

Journal:

• ACS Applied Materials & Interfaces (ISSN: 19448252) vol. 15 issue. 34 p. 40709-40718

Funding:

• H2020 Future and Emerging Technologies 899282

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1021/acsami.3c04808

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Updated at: 2025-03-01 08:30:31 +0900

Published on MDR: 2025-03-01 08:30:31 +0900