Lukas Renn
;
Lisa S. Walter
;
Kenji Watanabe
(National Institute for Materials Science)
;
Takashi Taniguchi
(National Institute for Materials Science)
;
R. Thomas Weitz
説明:
(abstract)Intrinsic charge transport in molecularly thin organic semiconducting crystals is critically sensitive to the quality of the interfaces required to perform the electrical measurements. Most prominent are the dielectric-semiconductor and semiconductor-metal interface. While impacts from the latter on charge transport can be extracted by four-terminal measurements, the impact of the dielectric interface can only be minimized, typically by utilizing inert dielectrics. Here we show, that the charge transport in organic field-effect transistors based on the n-type small molecule PDI1MPCN2 can be improved up to one order of magnitude by using hexagonal boron nitride (h-BN) as dielectric, compared to a standard SiO2 substrate. Using temperature-dependent two- and four-point measurements, we systematically analyze the charge-transport properties of our devices, where we obtain high 4-terminal mobilities of up to 5.0 〖cm〗^2⁄Vs. The high mobility likely stems from decreased charge-carrier trapping at the semiconductor-dielectric interface due to the smooth and continuous surface of the inert h-BN. Nevertheless, the temperature dependencies of the mobility, threshold voltage and interface-state trap density suggest, that charge-carrier trapping at the dielectric-semiconductor interface still exists. By comparing our data to transport studies performed on thin air-gapped organic films, we conclude that an interfacial layer (most likely water or solvent residues) between h-BN and the monolayer PDI1MPCN2 causes charge trapping.
権利情報:
キーワード: Charge transport, organic semiconducting crystals, hexagonal boron nitride
刊行年月日: 2022-01-29
出版者: Wiley
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1002/admi.202101701
関連資料:
その他の識別子:
連絡先:
更新時刻: 2025-02-26 08:30:49 +0900
MDRでの公開時刻: 2025-02-26 08:30:50 +0900
| ファイル名 | サイズ | |||
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Adv Materials Inter - 2022 - Renn - All About the Interface Do Residual Contaminants at A High‐Quality h‐BN Monolayer.pdf
(サムネイル)
application/pdf |
サイズ | 1.27MB | 詳細 |