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説明:

Diamond electronic devices have garnered significant interest owing to their excellent semiconducting properties. We recently demonstrated that excluding surface-transfer doping results in enhanced carrier mobility and a normally off behavior in diamond field-effect transistors (FETs) with a hexagonal boron nitride (h-BN) gate insulator. In our previous study, the gate electrode was overlapped onto the source/drain electrodes to prevent the increase in access resistance caused by the exclusion of the surface-transfer doping. However, it is known that gate overlap increases parasitic capacitance and gate leak current. In this study, we developed a technique for self-aligning the gate electrode with the edge of h-BN using oblique-angle deposition. The diamond FET with self-aligned gate electrode exhibits optimal FET characteristics, including high mobility of ≈400 cm²V^-1s^-1, low sheet resistance of 2.4 kOhm, and output characteristics demonstrating pinch-off behavior. Furthermore, the capacitance-voltage characteristics clearly indicate distinct ON and OFF states, validating the efficacy of this technique. This method enables the fabrication of diamond/h-BN FETs with no gate overlap and without increasing the access resistance, making it promising approach for developing high-speed, low-loss diamond FETs with a wide application scope.

権利情報:

• In Copyright
  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Yosuke Sasama, Takuya Iwasaki, Mohammad Monish, Kenji Watanabe, Takashi Taniguchi, Yamaguchi Takahide; Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator. Appl. Phys. Lett. 26 August 2024; 125 (9): 092103 and may be found at https://doi.org/10.1063/5.0224192

キーワード: Hydrogen-terminated diamond, Field-effect transistors, hexagonal boron nitride, Self-aligned gate electrode

刊行年月日: 2024-08-26

出版者: AIP Publishing

掲載誌:

• Applied Physics Letters (ISSN: 00036951) vol. 125 issue. 9

研究助成金:

• New Energy and Industrial Technology Development Organization JPNP14004
• Japan Society for the Promotion of Science JP22H01962
• Ministry of Education, Culture, Sports, Science and Technology JPMXP1223NM5196

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4743

公開URL: https://doi.org/10.1063/5.0224192

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更新時刻: 2024-09-12 16:30:45 +0900

MDRでの公開時刻: 2024-09-12 16:30:45 +0900