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Hexagonal boron nitride (hBN) nanosheets are widely used as gate dielectric and insulating substrates for two-dimensional (2D) material-based electronic and optoelectronic devices. While mechanical stress in hBN nanosheets is often either intrinsically or intentionally introduced for 2D material-based devices during device fabrication and operation, the dielectric strength of hBN nanosheets under mechanical stress is still elusive. In this work, the dielectric strength of hBN nanosheets in a metal/hBN/metal structure is systematically studied when mechanical stress normal to nanosheets is applied. The dielectric strength of hBN nanosheets is found to be weakened with lower breakdown strength, shorter breakdown time, and larger leakage current under the mechanical stress with the order of 100 MPa, and the weakening is more remarkable for thinner nanosheets. The thickness-dependent weakening of dielectric strength is attributed to the thickness-dependent stress gradient in hBN nanosheets. Importantly, the ability of hBN nanosheets to block leakage current can be significantly degraded by mechanical stress even for thick nanosheets up to 41.3 nm. The results indicate that hBN nanosheets are not ideal materials for insulating gates or substrates for 2D material-based devices mechanical stress.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

キーワード: hexagonal boron nitride, dielectric strength
, mechanical stress


刊行年月日: 2025-08-29

出版者: Springer Science and Business Media LLC

掲載誌:

• Nature Communications (ISSN: 20411723) vol. 16 8078

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41467-025-63358-6

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更新時刻: 2026-02-17 08:30:11 +0900

MDRでの公開時刻: 2026-02-16 18:00:52 +0900