Qiran Cai
;
Declan Scullion
;
Wei Gan
;
Alexey Falin
;
Shunying Zhang
;
Kenji Watanabe
(National Institute for Materials Science)
;
Takashi Taniguchi
(National Institute for Materials Science)
;
Ying Chen
;
Elton J. G. Santos
;
Lu Hua Li
Description:
(abstract)We prepare suspended high-quality atomically thin BN without polymer contamination to reveal their intrinsic k values and the thickness effect on phonon scattering. It is found that k of atomically thin BN measured by optothermal Raman technique increases with reduced thickness, i.e. 733±157, 605±132, 526±97 W/mK for 1-3L BN, respectively. In addition, for the first time we experimentally measured the thermal expansion coefficients (TECs) of 1-3L BN at 300-400 K, which are compared with ab initio density functional theory (DFT) calculations in a wider range of temperatures. This study indicates that atomically thin BN is one of the best electrically-insulating thermal conductors and a promising candidate for heat dissipation applications.
Rights:
Keyword: Thermal conductivity, hexagonal boron nitride, heat dissipation
Date published: 2019-06-07
Publisher: American Association for the Advancement of Science (AAAS)
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1126/sciadv.aav0129
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Updated at: 2025-02-23 22:51:07 +0900
Published on MDR: 2025-02-23 22:51:07 +0900
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