High thermal conductivity of high-quality monolayer boron nitride and its thermal expansion

Qiran Cai; Declan Scullion; Wei Gan; Alexey Falin; Shunying Zhang; Kenji Watanabe; Takashi Taniguchi; Ying Chen; Elton J. G. Santos; Lu Hua Li

doi:10.1126/sciadv.aav0129

論文 High thermal conductivity of high-quality monolayer boron nitride and its thermal expansion

Qiran Cai ; Declan Scullion ; Wei Gan ; Alexey Falin ; Shunying Zhang ; Kenji Watanabe (National Institute for Materials Science) ; Takashi Taniguchi (National Institute for Materials Science) ; Ying Chen ; Elton J. G. Santos ; Lu Hua Li

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Qiran Cai, Declan Scullion, Wei Gan, Alexey Falin, Shunying Zhang, Kenji Watanabe, Takashi Taniguchi, Ying Chen, Elton J. G. Santos, Lu Hua Li. High thermal conductivity of high-quality monolayer boron nitride and its thermal expansion. Science Advances. 2019, 5 (6), . https://doi.org/10.1126/sciadv.aav0129

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(abstract)

We prepare suspended high-quality atomically thin BN without polymer contamination to reveal their intrinsic k values and the thickness effect on phonon scattering. It is found that k of atomically thin BN measured by optothermal Raman technique increases with reduced thickness, i.e. 733±157, 605±132, 526±97 W/mK for 1-3L BN, respectively. In addition, for the first time we experimentally measured the thermal expansion coefficients (TECs) of 1-3L BN at 300-400 K, which are compared with ab initio density functional theory (DFT) calculations in a wider range of temperatures. This study indicates that atomically thin BN is one of the best electrically-insulating thermal conductors and a promising candidate for heat dissipation applications.

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