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説明:

Understanding the collective behavior of the quasiparticles in solid-state systems underpins the field of non-volatile electronics, including the opportunity to control many-body effects for well-desired physical phenomena and their applications. Hexagonal boron nitride (hBN) is a wide energy bandgap semiconductor, showing immense potential as a platform for low- dimensional device heterostructures. It is an inert dielectric used for gated devices, having a negligible orbital hybridization when placed in contact with other systems. Despite its inertness, we discover a large electron mass enhancement in few-layer hBN affecting the lifetime of the π-states. Here, we show that such a renormalization is consistent with a novel two- phonon intra-band scattering process, or inter-band scattering with the underlying graphene substrate. Our findings thus unveil a so-far unknown phenomenology, going beyond the standard description of a single electron-phonon coupling, with important implications for devices using hBN as one of their building blocks.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Quasiparticles, hexagonal boron nitride, many-body effects

刊行年月日: 2023-08-23

出版者: American Chemical Society (ACS)

掲載誌:

• Nano Letters (ISSN: 15306984) vol. 23 issue. 16 p. 7539-7545

研究助成金:

• Norges Forskningsråd 245963
• Norges Forskningsråd 262633
• Norges Forskningsråd 280788
• Norges Forskningsråd 315330
• Norges Forskningsråd 324183
• Japan Society for the Promotion of Science 19H05790
• Japan Society for the Promotion of Science 20H00354
• Japan Society for the Promotion of Science 21H05233

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1021/acs.nanolett.3c02086

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更新時刻: 2025-02-14 16:31:03 +0900

MDRでの公開時刻: 2025-02-14 16:31:03 +0900