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When serving as a protection tissue and/or inducing a periodic lateral modulation for/in atomically thin crystals, hexagonal boron nitride, hBN, has revolutionised the research on van der Waals heterostructures. By itself, hBN appears as an emergent wide‐bandgap material which, importantly, can be optically bright in the far UV range and which frequently displays the mid‐gap defect‐related centres of yet unclear origin but, interestingly, acting as single photon emitters. Controlling the hBN doping is of particular interest in view of possible practical use of this material. Here we demonstrate that enriching hBN with carbon (C) activates an optical response of this material in form of a series of well‐defined resonances in visible and near‐infrared region, which appear in the luminescence spectra measured under below‐bandgap excitation. Two, qualitatively different C‐related radiative centres are identified: one follows the Franck‐Condon principle that describes transitions between two defect states with emission/annihilation of optical phonons and the other shows atomic‐like resonances characteristic of intra‐defect transitions. With the detailed characterisation of the energy structure and emission dynamics of these radiative centres we contribute to development of the controlled doping of hBN with mid‐gap centres.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Defect centers, hexagonal boron nitride, single-photon sources

刊行年月日: 2020-06-16

出版者: Proceedings of the National Academy of Sciences

掲載誌:

• Proceedings of the National Academy of Sciences (ISSN: 10916490) vol. 117 issue. 24 p. 13214-13219

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1073/pnas.2003895117

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更新時刻: 2025-02-28 16:30:43 +0900

MDRでの公開時刻: 2025-02-28 16:30:43 +0900