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When serving as a protection tissue and/or inducing a periodic lateral modulation for/in atomically thin crystals, hexagonal boron nitride, hBN, has revolutionised the research on van der Waals heterostructures. By itself, hBN appears as an emergent wide‐bandgap material which, importantly, can be optically bright in the far UV range and which frequently displays the mid‐gap defect‐related centres of yet unclear origin but, interestingly, acting as single photon emitters. Controlling the hBN doping is of particular interest in view of possible practical use of this material. Here we demonstrate that enriching hBN with carbon (C) activates an optical response of this material in form of a series of well‐defined resonances in visible and near‐infrared region, which appear in the luminescence spectra measured under below‐bandgap excitation. Two, qualitatively different C‐related radiative centres are identified: one follows the Franck‐Condon principle that describes transitions between two defect states with emission/annihilation of optical phonons and the other shows atomic‐like resonances characteristic of intra‐defect transitions. With the detailed characterisation of the energy structure and emission dynamics of these radiative centres we contribute to development of the controlled doping of hBN with mid‐gap centres.

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• Creative Commons BY Attribution 4.0 International
  

Keyword: Defect centers, hexagonal boron nitride, single-photon sources

Date published: 2020-06-16

Publisher: Proceedings of the National Academy of Sciences

Journal:

• Proceedings of the National Academy of Sciences (ISSN: 10916490) vol. 117 issue. 24 p. 13214-13219

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Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1073/pnas.2003895117

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Updated at: 2025-02-28 16:30:43 +0900

Published on MDR: 2025-02-28 16:30:43 +0900