3 件のレコードが見つかりました。
Enhanced channel mobility of hexagonal boron nitride/hydrogen-terminated diamond heterojunction field-effect transistor
- ジャーナル論文
- 著者
-
Yosuke Sasama (author) (この著者で検索)
;
Takuya Iwasaki (author) (この著者で検索)
;
Masataka Imura (author) (この著者で検索)
;
Kenji Watanabe (author) (この著者で検索)
;
Takashi Taniguchi (author) (この著者で検索)
;
Yamaguchi Takahide (author) (この著者で検索)
- キーワード
- diamond, field-effect transistors, hexagonal boron nitride
- 刊行年月日
- 2025-10-06
- 更新時刻
- 2025-10-21 16:06:02 +0900
Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator
- ジャーナル論文
- 著者
-
Yosuke Sasama (author) (この著者で検索)
;
Takuya Iwasaki (author) (この著者で検索)
;
Mohammad Monish (author) (この著者で検索)
;
Kenji Watanabe (author) (この著者で検索)
;
Takashi Taniguchi (author) (この著者で検索)
;
Yamaguchi Takahide (author) (この著者で検索)
- キーワード
- Hydrogen-terminated diamond, Field-effect transistors, hexagonal boron nitride, Self-aligned gate electrode
- 刊行年月日
- 2024-08-26
- 更新時刻
- 2024-09-12 16:30:45 +0900
Surface transfer doping of hydrogen-terminated diamond probed by shallow nitrogen-vacancy centers
- ジャーナル論文
- 著者
-
Taisuke Kageura (author) (この著者で検索)
https://orcid.org/0000-0002-9792-5223
(unauthenticated)
National Institute for Materials Science
;
Yosuke Sasama (author) (この著者で検索)National Institute for Materials Science
;
;Keisuke Yamada (author) (この著者で検索);Kosuke Kimura (author) (この著者で検索);Shinobu Onoda (author) (この著者で検索)Yamaguchi Takahide (author) (この著者で検索)National Institute for Materials Science
- キーワード
- Diamond, Transfer doping, NV center, Two-dimensional hole gas, Hydrogen-terminated surface
- 刊行年月日
- 2024-07-02
- 更新時刻
- 2024-08-29 16:09:18 +0900