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説明:

In gapped Dirac materials, the topological current associated with each valley can flow in opposite directions creating long-range charge-neutral valley currents. We report valley currents in hBN/bilayer-graphene heterostructures with an energy gap, which is tunable by a perpendicular electric (displacement) field in a dual-gated structure. We observed significant nonlocal resistance, consistent with the scaling theory of the valley Hall effect. In the low-temperature limit, the nonlocal resistance approaches a saturated value near the “quantum limit,” indicating the emergence of quantum valley currents.

権利情報:

• In Copyright
  ©2024 American Physical Society

キーワード: bilayer graphene, hexagonal boron nitride, heterostructure, valley Hall effect

刊行年月日: 2024-02-08

出版者: American Physical Society (APS)

掲載誌:

• Physical Review B (ISSN: 1550235X) vol. 109 issue. 7 075409

研究助成金:

• Japan Society for the Promotion of Science 21H01400
• Ministry of Education, Culture, Sports, Science and Technology JPMXP1223NM5186

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5267

公開URL: https://doi.org/10.1103/PhysRevB.109.075409

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更新時刻: 2025-01-10 16:31:45 +0900

MDRでの公開時刻: 2025-01-10 16:31:45 +0900