キーワード: Ga2O3
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41 件のレコードが見つかりました。 1件目から10件目まで表示します。

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nohighlight_Si-K-Ga2O3_resubmit_2403011908_revYY.pdf
Photoelectron holographic study for atomic site occupancy for Si dopants in Si-doped κ-Ga2O3(001)
ジャーナル論文
著者
Yuhua Tsai (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group
ORCID ;
Yusuke Hashimoto (author) (この著者で検索)
NAIST
;
ZeXu Sun (author) (この著者で検索)
NAIST
;
Takuya Moriki (author) (この著者で検索)
NAIST
;
Takashi Tadamura (author) (この著者で検索)
NAIST
;
Takahiro Nagata (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group
ORCID SAMURAI ;
Piero Mazzolini (author) (この著者で検索)
University of Parma
;
Antonella Parisini (author) (この著者で検索)
University of Parma
;
Matteo Bosi (author) (この著者で検索)
IMEM-CNR
;
Luca Seravalli (author) (この著者で検索)
IMEM-CNR
;
Tomohiro Matsushita (author) (この著者で検索)
NAIST
;
Yoshiyuki Yamashita (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group
ORCID SAMURAI
キーワード
Ga2O3, κ-Ga2O3
刊行年月日
2024-04-03
更新時刻
2025-03-07 12:30:11 +0900
Nabatame_d-SiO2-Ga2O3 2026_ECS_J._Solid_State_Sci._Technol._15_064005.pdf
Characteristics of β-Ga2O3/Al2O3/Pt capacitors with a Ga2O3 surface modified using the dummy-SiO2 process
ジャーナル論文
著者
Toshihide Nabatame (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)
ORCID SAMURAI ;
Yoshihiro Irokawa (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
ORCID SAMURAI ;
Tomomi Sawada (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
;
Hiromi Miura (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
;
Manami Miyamoto (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
;
Takashi Onaya (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
ORCID ;
Yasuo Koide (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
ORCID SAMURAI ;
Kazuhito Tsukagoshi (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
ORCID SAMURAI
キーワード
Ga2O3, atomic layer deposition, dummy-SiO2, Al2O3, positive bias stress
刊行年月日
2026-06-01
更新時刻
2026-08-18 11:30:17 +0900
再々投稿_260324.docx
Photoelectron Holographic Study of Atomic Structure of Si Dopants for Si-doped κ-Ga2O3(001)
ジャーナル論文
著者
Yoshiyuki YAMASHITA (author) (この著者で検索)
;
Yuhua TSAI (author) (この著者で検索)
;
Yusuke HASHIMOTO (author) (この著者で検索)
;
Tomohiro MATSUSHITA (author) (この著者で検索)
;
Piero MAZZOLINI (author) (この著者で検索)
キーワード
Photoelectron Holography, Ga2O3, dopant
刊行年月日
2026-07-10
更新時刻
2026-08-05 15:56:53 +0900
T. Oshima_Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography.docx
Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography
ジャーナル論文
著者
Takayoshi Oshima (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI
キーワード
Ga2O3, lithography
刊行年月日
2023-01-01
更新時刻
2024-01-24 11:20:15 +0900
nohighlight_Sn_dopedGa2O3_240222_v2_revYY.pdf
Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)
ジャーナル論文
著者
Yuhua Tsai (author) (この著者で検索)
National Institute for Materials Science
ORCID ;
Masaaki Kobata (author) (この著者で検索)
ORCID ;
Tatsuo Fukuda (author) (この著者で検索)
ORCID ;
Hajime Tanida (author) (この著者で検索)
ORCID ;
Toru Kobayashi (author) (この著者で検索)
;
Yoshiyuki Yamashita (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI
キーワード
Ga2O3, dopant, b-Ga2O3
刊行年月日
2024-03-11
更新時刻
2024-03-19 12:30:20 +0900
Dataset
Original dataset for ID 208 Ga2O3 in Thermophysical Property Database
データセット
コレクション
Thermophysical Property Original Datasets
著者
Takehiko Ishikawa (depositor) (この著者で検索)
Japan Aerospace Exploration Agency
;
Masashi Ishii (editor) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI
キーワード
Ga2O3, Ceramic, Density, ISS-ELF, Electrostatic Levitation, collection - Thermophys Datasets
刊行年月日
更新時刻
2024-03-30 18:40:44 +0900
EB_alpha-GO_240422-2HQ(clean).pdf
Epitaxial Lateral Overgrowth of c-plane α-Ga2O3 using a stripe mask with ultra-narrow windows
ジャーナル論文
著者
Yuichi Oshima (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
ORCID SAMURAI ;
Takashi Shinohe (author) (この著者で検索)
FLOSFIA INC.
キーワード
Ga2O3, dislocation, HVPE, ELO
刊行年月日
2025-05-19
更新時刻
2025-05-21 16:30:09 +0900
055207_1_5.0260753-2-8.pdf
Fabrication of air bridges on (100) β-Ga2O3 using crystallographic HCl gas etching
ジャーナル論文
著者
ORCID SAMURAI ; ORCID SAMURAI
キーワード
Ga2O3, HCl gas etching, air bridge
刊行年月日
2025-05-01
更新時刻
2025-05-07 12:30:22 +0900
manuscript2022-11.pdf
High-performance β-Ga2O3 Schottky barrier diodes and metal-semiconductor field-effect transistors on a high doping level epitaxial layer
ジャーナル論文
著者
Qihao Zhang (author) (この著者で検索)
;
Jiangwei Liu (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Chunming Tu (author) (この著者で検索)
;
Dongyuan Zhai (author) (この著者で検索)
;
Min He (author) (この著者で検索)
;
Jiwu Lu (author) (この著者で検索)
キーワード
Ga2O3, Transistor
刊行年月日
2023-01-03
更新時刻
2025-01-04 16:30:50 +0900
042110_1_5.0186319.pdf
Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches
ジャーナル論文
著者
Takayoshi Oshima (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials
ORCID SAMURAI ;
Yuichi Oshima (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials
ORCID SAMURAI
キーワード
Ga2O3, (-102), selective area growth, selective area etching
刊行年月日
2024-01-22
更新時刻
2025-01-25 12:30:12 +0900
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