ジャーナル論文 Photoelectron holographic study for atomic site occupancy for Si dopants in Si-doped κ-Ga2O3(001)
Yuhua Tsai (author) (この著者で検索)
ORCID https://orcid.org/0000-0001-7996-6681
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group
ORCID ;
Yusuke Hashimoto (author) (この著者で検索)
NAIST
;
ZeXu Sun (author) (この著者で検索)
NAIST
;
Takuya Moriki (author) (この著者で検索)
NAIST
;
Takashi Tadamura (author) (この著者で検索)
NAIST
;
Takahiro Nagata (author) (この著者で検索)
ORCID https://orcid.org/0000-0002-8591-2943
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group
SAMURAI NIMS Researchers Directory SAMURAI
ORCID SAMURAI ;
Piero Mazzolini (author) (この著者で検索)
University of Parma
;
Antonella Parisini (author) (この著者で検索)
University of Parma
;
Matteo Bosi (author) (この著者で検索)
IMEM-CNR
;
Luca Seravalli (author) (この著者で検索)
IMEM-CNR
;
Tomohiro Matsushita (author) (この著者で検索)
NAIST
;
Yoshiyuki Yamashita (author) (この著者で検索)
ORCID https://orcid.org/0000-0003-0994-8095
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group
SAMURAI NIMS Researchers Directory SAMURAI
ORCID SAMURAI
nohighlight_Si-K-Ga2O3_resubmit_2403011908_revYY.pdf
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引用
Yuhua Tsai, Yusuke Hashimoto, ZeXu Sun, Takuya Moriki, Takashi Tadamura, Takahiro Nagata, Piero Mazzolini, Antonella Parisini, Matteo Bosi, Luca Seravalli, Tomohiro Matsushita, Yoshiyuki Yamashita. Photoelectron holographic study for atomic site occupancy for Si dopants in Si-doped κ-Ga2O3(001). NANO LETTERS. 2024, 24 (13), 3978-3985. https://doi.org/10.1021/acs.nanolett.4c00482
SAMURAI

代替タイトル: NA

説明:

(abstract)

κ-Ga2O3中Siドーパントの原子位置を光電子ホログラフィ法により明らかにした。

権利情報:

  • In Copyright

    This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © 2024 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.4c00482

キーワード: Ga2O3, κ-Ga2O3

刊行年月日: 2024-04-03

出版者: American Chemical Society

掲載誌:

  • NANO LETTERS (ISSN: 15306984) vol. 24 issue. 13 p. 3978-3985

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4479

公開URL: https://doi.org/10.1021/acs.nanolett.4c00482

関連資料:

その他の識別子:

連絡先:

更新時刻: 2025-03-07 12:30:11 +0900

MDRでの公開時刻: 2025-03-07 12:30:12 +0900

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