Photoelectron holographic study for atomic site occupancy for Si dopants in Si-doped κ-Ga2O3(001)

Yuhua Tsai; Yusuke Hashimoto; ZeXu Sun; Takuya Moriki; Takashi Tadamura; Takahiro Nagata; Piero Mazzolini; Antonella Parisini; Matteo Bosi; Luca Seravalli; Tomohiro Matsushita; Yoshiyuki Yamashita

doi:10.1021/acs.nanolett.4c00482

論文 Photoelectron holographic study for atomic site occupancy for Si dopants in Si-doped κ-Ga2O3(001)

Yuhua Tsai (Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group, National Institute for Materials Science) ; Yusuke Hashimoto (NAIST) ; ZeXu Sun (NAIST) ; Takuya Moriki (NAIST) ; Takashi Tadamura (NAIST) ; Takahiro Nagata (Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group, National Institute for Materials Science) ; Piero Mazzolini (University of Parma) ; Antonella Parisini (University of Parma) ; Matteo Bosi (IMEM-CNR) ; Luca Seravalli (IMEM-CNR) ; Tomohiro Matsushita (NAIST) ; Yoshiyuki Yamashita (Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group, National Institute for Materials Science)

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引用

Yuhua Tsai, Yusuke Hashimoto, ZeXu Sun, Takuya Moriki, Takashi Tadamura, Takahiro Nagata, Piero Mazzolini, Antonella Parisini, Matteo Bosi, Luca Seravalli, Tomohiro Matsushita, Yoshiyuki Yamashita. Photoelectron holographic study for atomic site occupancy for Si dopants in Si-doped κ-Ga2O3(001). NANO LETTERS. 2024, 24 (13), 3978-3985. https://doi.org/10.1021/acs.nanolett.4c00482

(BibTeX)

代替タイトル: NA

説明:

(abstract)

κ-Ga2O3中Siドーパントの原子位置を光電子ホログラフィ法により明らかにした。

権利情報:

In Copyright
This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © 2024 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.4c00482

キーワード: Ga2O3, κ-Ga2O3

刊行年月日: 2024-04-03

出版者: American Chemical Society

掲載誌:

NANO LETTERS (ISSN: 15306984) vol. 24 issue. 13 p. 3978-3985

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4479

公開URL: https://doi.org/10.1021/acs.nanolett.4c00482

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更新時刻: 2025-03-07 12:30:11 +0900

MDRでの公開時刻: 2025-03-07 12:30:12 +0900

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