Photoelectron holographic study for atomic site occupancy for Si dopants in Si-doped κ-Ga2O3(001)

Yuhua Tsai; Yusuke Hashimoto; ZeXu Sun; Takuya Moriki; Takashi Tadamura; Takahiro Nagata; Piero Mazzolini; Antonella Parisini; Matteo Bosi; Luca Seravalli; Tomohiro Matsushita; Yoshiyuki Yamashita

doi:10.1021/acs.nanolett.4c00482

Journal article Photoelectron holographic study for atomic site occupancy for Si dopants in Si-doped κ-Ga2O3(001)

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Yuhua Tsai, Yusuke Hashimoto, ZeXu Sun, Takuya Moriki, Takashi Tadamura, Takahiro Nagata, Piero Mazzolini, Antonella Parisini, Matteo Bosi, Luca Seravalli, Tomohiro Matsushita, Yoshiyuki Yamashita. Photoelectron holographic study for atomic site occupancy for Si dopants in Si-doped κ-Ga2O3(001). NANO LETTERS. 2024, 24 (13), 3978-3985. https://doi.org/10.1021/acs.nanolett.4c00482

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Alternative title: NA

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(abstract)

κ-Ga2O3中Siドーパントの原子位置を光電子ホログラフィ法により明らかにした。

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This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © 2024 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.4c00482

Keyword: Ga2O3, κ-Ga2O3

Date published: 2024-04-03

Publisher: American Chemical Society

Journal:

NANO LETTERS (ISSN: 15306984) vol. 24 issue. 13 p. 3978-3985

Funding:

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4479

First published URL: https://doi.org/10.1021/acs.nanolett.4c00482

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Updated at: 2025-03-07 12:30:11 +0900

Published on MDR: 2025-03-07 12:30:12 +0900

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