Yuhua Tsai
(Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group, National Institute for Materials Science
)
;
Yusuke Hashimoto
(NAIST)
;
ZeXu Sun
(NAIST)
;
Takuya Moriki
(NAIST)
;
Takashi Tadamura
(NAIST)
;
Takahiro Nagata
(Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group, National Institute for Materials Science
)
;
Piero Mazzolini
(University of Parma)
;
Antonella Parisini
(University of Parma)
;
Matteo Bosi
(IMEM-CNR)
;
Luca Seravalli
(IMEM-CNR)
;
Tomohiro Matsushita
(NAIST)
;
Yoshiyuki Yamashita
(Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group, National Institute for Materials Science
)
Alternative title: NA
Description:
(abstract)κ-Ga2O3中Siドーパントの原子位置を光電子ホログラフィ法により明らかにした。
Rights:
This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © 2024 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.4c00482
Date published: 2024-04-03
Publisher: American Chemical Society
Journal:
Funding:
Manuscript type: Author's version (Accepted manuscript)
MDR DOI: https://doi.org/10.48505/nims.4479
First published URL: https://doi.org/10.1021/acs.nanolett.4c00482
Related item:
Other identifier(s):
Contact agent:
Updated at: 2025-03-07 12:30:11 +0900
Published on MDR: 2025-03-07 12:30:12 +0900
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