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Photoelectron holographic study for atomic site occupancy for Si dopants in Si-doped κ-Ga2O3(001)
- ジャーナル論文
- 著者
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Yuhua Tsai (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group
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;Yusuke Hashimoto (author) (この著者で検索)NAIST;ZeXu Sun (author) (この著者で検索)NAIST;Takuya Moriki (author) (この著者で検索)NAIST;Takashi Tadamura (author) (この著者で検索)NAISTTakahiro Nagata (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group
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;Piero Mazzolini (author) (この著者で検索)University of Parma;Antonella Parisini (author) (この著者で検索)University of Parma;Matteo Bosi (author) (この著者で検索)IMEM-CNR;Luca Seravalli (author) (この著者で検索)IMEM-CNR;Tomohiro Matsushita (author) (この著者で検索)NAISTYoshiyuki Yamashita (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group
- キーワード
- Ga2O3, κ-Ga2O3
- 刊行年月日
- 2024-04-03
- 更新時刻
- 2025-03-07 12:30:11 +0900