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説明:

We have demonstrated selective-area growth and selective-area etching on SiO2-masked (−102) β-Ga2O3 substrates using a HCl-based halide-vapor-phase epitaxy system that is capable of performing both growth and gas etching without plasma excitation. Since the surface of the (−102) substrate is perpendicular to the (100) plane, which has the lowest surface energy, we were able to use both methods to fabricate plasma-damage-free fins and trenches with (100)-faceted vertical sidewalls on windows striped along the [010] direction with high processing accuracy. Furthermore, since the [010] window direction is aligned parallel to the majority of dislocations and line-shaped voids in the substrate—which extend along the [010] direction and could potentially act as leakage paths—such crystal defects are unlikely to appear on the surfaces of the resulting fins and trenches. We believe that these selective-area growth/etching techniques can greatly accelerate research on, and the development of, β-Ga2O3-based vertical/lateral devices with fins or trenches.

権利情報:

• In Copyright
  

  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in akayoshi Oshima et al., Appl. Phys. Lett. 124, 042110 (2024) and may be found at https://doi.org/10.1063/5.0186319.

キーワード: Ga2O3, (-102), selective area growth, selective area etching

刊行年月日: 2024-01-22

出版者: Applied Phyiscs Letters

掲載誌:

• APPLIED PHYSICS LETTERS (ISSN: 00036951) vol. 124 issue. 4 p. 42110-42110 042110

研究助成金:

• 東電記念財団

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1063/5.0186319

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更新時刻: 2025-01-25 12:30:12 +0900

MDRでの公開時刻: 2025-01-25 12:30:13 +0900