Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches

論文

著者

Takayoshi Oshima ; Yuichi Oshima

キーワード

Ga2O3, (-102), selective area growth, selective area etching

刊行年月日

2024-01-22

更新時刻

2025-01-25 12:30:12 +0900