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We have demonstrated selective-area growth and selective-area etching on SiO2-masked (−102) β-Ga2O3 substrates using a HCl-based halide-vapor-phase epitaxy system that is capable of performing both growth and gas etching without plasma excitation. Since the surface of the (−102) substrate is perpendicular to the (100) plane, which has the lowest surface energy, we were able to use both methods to fabricate plasma-damage-free fins and trenches with (100)-faceted vertical sidewalls on windows striped along the [010] direction with high processing accuracy. Furthermore, since the [010] window direction is aligned parallel to the majority of dislocations and line-shaped voids in the substrate—which extend along the [010] direction and could potentially act as leakage paths—such crystal defects are unlikely to appear on the surfaces of the resulting fins and trenches. We believe that these selective-area growth/etching techniques can greatly accelerate research on, and the development of, β-Ga2O3-based vertical/lateral devices with fins or trenches.

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  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in akayoshi Oshima et al., Appl. Phys. Lett. 124, 042110 (2024) and may be found at https://doi.org/10.1063/5.0186319.

Keyword: Ga2O3, (-102), selective area growth, selective area etching

Date published: 2024-01-22

Publisher: Applied Phyiscs Letters

Journal:

• APPLIED PHYSICS LETTERS (ISSN: 00036951) vol. 124 issue. 4 p. 42110-42110 042110

Funding:

• 東電記念財団

Manuscript type: Publisher's version (Version of record)

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First published URL: https://doi.org/10.1063/5.0186319

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Updated at: 2025-01-25 12:30:12 +0900

Published on MDR: 2025-01-25 12:30:13 +0900