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The characteristics of β-Ga2O3/Al2O3/Pt capacitors fabricated via the dummy-SiO2 (d-SiO2) process at 800 °C under O2 (D-O2), N2 (D-N2), and 3% H2 (D-H2) atmospheres were investigated. The surface of Ga2O3 after the d-SiO2 process was as smooth as that after the sulfuric acid-hydrogen peroxide mixture treatment (Control). The flatband voltage (Vfb) hysteresis decreased as follows: Control (0.76 V) > D-H2 (0.56 V) > D-N2 (0.43 V) > D-O2 (0.37 V). The interface state density of the D-O2 capacitor was significantly reduced to 6 × 1011 cm−2eV−1 at −0.4 eV from conduction band. The Vfb shift caused by the electron traps according to the near-interface trap model under positive bias stress substantially improved for the capacitors fabricated by the d-SiO2 process. The poor characteristics of the Control capacitor are due to the presence of the unstable layer on the Ga2O3 surface. The improved electrical characteristic of the d-SiO2 capacitors is due to the modified Ga2O3 surface, which eliminated the unstable Ga2O3 layer. This is the result of hydrogen contained within the dummy SiO2 layer supporting the removal of Ga2O3. The difference in the decomposition reaction of Ga2O3 due to the atmosphere gas of the d-SiO2 process leads to differences in electrical properties.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Ga2O3, atomic layer deposition, dummy-SiO2, Al2O3, positive bias stress

刊行年月日: 2026-06-01

出版者: The Electrochemical Society

掲載誌:

• ECS Journal of Solid State Science and Technology (ISSN: 21628777) vol. 15 issue. 6

研究助成金:

• NEXT JPJ009777
• ARIM JPMXP1223NM5088

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1149/2162-8777/ae7ac0

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更新時刻: 2026-08-18 11:30:17 +0900

MDRでの公開時刻: 2026-08-18 12:27:23 +0900