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The characteristics of β-Ga2O3/Al2O3/Pt capacitors fabricated via the dummy-SiO2 (d-SiO2) process at 800 °C under O2 (D-O2), N2 (D-N2), and 3% H2 (D-H2) atmospheres were investigated. The surface of Ga2O3 after the d-SiO2 process was as smooth as that after the sulfuric acid-hydrogen peroxide mixture treatment (Control). The flatband voltage (Vfb) hysteresis decreased as follows: Control (0.76 V) > D-H2 (0.56 V) > D-N2 (0.43 V) > D-O2 (0.37 V). The interface state density of the D-O2 capacitor was significantly reduced to 6 × 1011 cm−2eV−1 at −0.4 eV from conduction band. The Vfb shift caused by the electron traps according to the near-interface trap model under positive bias stress substantially improved for the capacitors fabricated by the d-SiO2 process. The poor characteristics of the Control capacitor are due to the presence of the unstable layer on the Ga2O3 surface. The improved electrical characteristic of the d-SiO2 capacitors is due to the modified Ga2O3 surface, which eliminated the unstable Ga2O3 layer. This is the result of hydrogen contained within the dummy SiO2 layer supporting the removal of Ga2O3. The difference in the decomposition reaction of Ga2O3 due to the atmosphere gas of the d-SiO2 process leads to differences in electrical properties.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: Ga2O3, atomic layer deposition, dummy-SiO2, Al2O3, positive bias stress

Date published: 2026-06-01

Publisher: The Electrochemical Society

Journal:

• ECS Journal of Solid State Science and Technology (ISSN: 21628777) vol. 15 issue. 6

Funding:

• NEXT JPJ009777
• ARIM JPMXP1223NM5088

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1149/2162-8777/ae7ac0

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Updated at: 2026-08-18 11:30:17 +0900

Published on MDR: 2026-08-18 12:27:23 +0900