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説明:

β-Ga2O3 air bridges on (100) substrates were fabricated through a self-aligning process that used conventional anisotropic BCl3/Ar-plasma etching and crystallographic plasma-free HCl gas etching. The former etching can be done as vertical etching to expose the etched sidewalls, whereas the latter etching enables horizontal etching that is aligned with the (100) plane owing to the high etch resistance due to the lowest surface energy density of the (100) plane. By combining the two orthogonal etching techniques with other standard device fabrication processes, we were able to create air bridges. We believe that the undercut etching method demonstrated herein will facilitate the fabrication of micro-electromechanical systems.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Ga2O3, HCl gas etching, air bridge

刊行年月日: 2025-05-01

出版者: AIP Publishing

掲載誌:

• AIP Advances (ISSN: 21583226) vol. 15 issue. 5

研究助成金:

• TEPCO Memorial Foundation
• Japan Society for the Promotion of Science JP24K01368

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1063/5.0260753

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更新時刻: 2025-05-07 12:30:22 +0900

MDRでの公開時刻: 2025-05-07 12:19:27 +0900