11 records found.
Epitaxial Lateral Overgrowth of c-plane α-Ga2O3 using a stripe mask with ultra-narrow windows
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
;
Takashi Shinohe (author) (Search by this author)FLOSFIA INC. - Keyword
- Ga2O3, dislocation, HVPE, ELO
- Date published
- 2025-05-19
- Updated at
- 2025-05-21 16:30:09 +0900
Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
- Journal article
- Creator
-
Y. Oshima (author) (Search by this author)
;
;K. Kawara (author) (Search by this author);T. Shinohe (author) (Search by this author);T. Hitora (author) (Search by this author);M. Kasu (author) (Search by this author)S. Fujita (author) (Search by this author)
- Keyword
- α-Ga2O3, HVPE, ELO, dislocation
- Date published
- 2019-02-01
- Updated at
- 2024-01-29 16:48:15 +0900
Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along -12-10>
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
;
;Shingo Yagyu (author) (Search by this author)Takashi Shinohe (author) (Search by this author)
- Keyword
- α-Ga2O3, HVPE, dislocation, ELO
- Date published
- 2021-11-07
- Updated at
- 2024-01-30 16:49:49 +0900
Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)
;
;Katsuaki Kawara (author) (Search by this author);Takayoshi Oshima (author) (Search by this author);Mitsuru Okigawa (author) (Search by this author)Takashi Shinohe (author) (Search by this author)
- Keyword
- α-Ga2O3, ELO, HVPE
- Date published
- 2020-02-01
- Updated at
- 2024-01-22 09:41:33 +0900
Halide Vapor Phase Epitaxy 2—Heteroepitaxial Growth of α- and ɛ-Ga2O3
- Book
- Creator
-
大島祐一 (author) (Search by this author)Research Center for Functional Materials/Optical Materials Field/Optical Single Crystals Group, National Institute for Materials Science
- Keyword
- Ga2O3, HVPE
- Date published
- 2020-04-24
- Updated at
- 2024-01-30 10:29:29 +0900
In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)
;
;Katsuaki Kawara (author) (Search by this author);Takayoshi Oshima (author) (Search by this author)Takashi Shinohe (author) (Search by this author)
- Keyword
- κ-Ga2O3, ε-Ga2O3, ELO, domain, HVPE
- Date published
- 2020-11-01
- Updated at
- 2024-01-22 09:39:14 +0900
Hydride Vapor Phase Epitaxy and characterization of High-Quality ScN epilayers
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)
;
;Encarnación G. Víllora (author) (Search by this author)Kiyoshi Shimamura (author) (Search by this author)
- Keyword
- ScN, HVPE
- Date published
- 2014-04-21
- Updated at
- 2024-01-30 16:35:16 +0900
Halide vapor phase epitaxy of a thick c -plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)
;
Takayoshi Oshima (author) (Search by this author)
;
Shiyu Xiao (author) (Search by this author)
https://orcid.org/0009-0007-0382-0396
(unauthenticated)
;
;Kazuto Murakami (author) (Search by this author);Katsuhiro Imai (author) (Search by this author)Takahiro Tomita (author) (Search by this author) - Keyword
- Ga2O3, HVPE, Cr2O3
- Date published
- 2026-02-21
- Updated at
- 2026-02-18 16:30:15 +0900
Reduction of dislocation density in α-Ga2O3 epilayers via rapid growth at low temperatures by halide vapor phase epitaxy
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
;
;Hiroyuki Ando (author) (Search by this author)Takashi Shinohe (author) (Search by this author)
- Keyword
- α-Ga2O3, dislocation, HVPE
- Date published
- 2023-06-01
- Updated at
- 2024-06-23 08:30:11 +0900
Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties
- Journal article
- Creator
-
;Yuichi Oshima (author) (Search by this author);Katsuaki Kawara (author) (Search by this author);Takayoshi Oshima (author) (Search by this author);Mitsuru Okigawa (author) (Search by this author)Takashi Shinohe (author) (Search by this author)
- Keyword
- α-Ga2O3, HVPE
- Date published
- 2020-05-01
- Updated at
- 2024-01-22 09:40:57 +0900