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代替タイトル: 選択横方向成長による幾何学的自然淘汰機構を利用した (001) κ-Ga2O3の面内配向制御

説明:

The present work demonstrates a new technique to solve the in-plane rotational domain problem. In the technique, κ-Ga2O3 was grown by epitaxial lateral overgrowth. An SiOx mask with stripe or dotted-stripe pattern was aligned on a c-plane sapphire substrate with a TiOx buffer layer so that the stripe was parallel to [11-20 ] direction of sapphire. κ-Ga2O3 was then grown on the substrate by halide vapor phase epitaxy. Electron backscattered diffraction, XRD, Transmission electron microscopy, and selective area electron diffraction revealed that the in-plane three orientations of κ-Ga2O3 domains converged to just one of them whose [010] direction was perpendicular to the stripe. The convergence occurred through natural selection mechanism due to anisotropy of in-plane growth rate.

権利情報:

• In Copyright
  © 2020 The Japan Society of Applied Physics
  This is an author-created, un-copyedited version of an article accepted for publication/published in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/abbc57.

キーワード: κ-Ga2O3, ε-Ga2O3, ELO, domain, HVPE

刊行年月日: 2020-11-01

出版者: IOP Publishing

掲載誌:

• JAPANESE JOURNAL OF APPLIED PHYSICS (ISSN: 00214922) vol. 59 issue. 11 p. 115501-115501

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4536

公開URL: https://doi.org/10.35848/1347-4065/abbc57

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更新時刻: 2024-01-22 09:39:14 +0900

MDRでの公開時刻: 2024-01-22 12:30:13 +0900