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代替タイトル: HCl添加によるα-Ga2O3の高速HVPE成長および原料供給条件が結晶特性に及ぼす影響

説明:

We investigated the effect of supply conditions of GaCl, O2, and additional HCl on the growth rate of (0001) alpha-Ga2O3 by halide vapor phase epitaxy (HVPE) and the crystal properties. The parasitic gas-phase reaction was markedly suppressed by supplying HCl gas in addition to GaCl and O2, and a rapid growth rate as high as 101 um/h was achieved. Thermodynamic analysis revealed that the addition of HCl works to convert GaCl into GaCl3, and it was elucidated that the parasitic gas-phase reaction was suppressed because alpha-Ga2O3 was grown through the chemical reaction of GaCl3 and the oxygen sources (O2 and/or H2O), the equilibrium constant of which is much smaller than that when GaCl is used. The full-width half-maximum (FWHM) of the X-ray rocking curve of 10-12 diffraction measured in skew-symmetric geometry decreased with increasing growth rate by increasing the precursor supply, whereas that of symmetric 0006 diffraction did not show a systematic tendency.

権利情報:

• In Copyright
  

  © 2020 IOP Publishing Ltd
  
  This is an author-created, un-copyedited version of an article accepted for publication/published
  in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or
  any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6641/ab7843.

キーワード: α-Ga2O3, HVPE

刊行年月日: 2020-05-01

出版者: IOP Publishing

掲載誌:

• SEMICONDUCTOR SCIENCE AND TECHNOLOGY (ISSN: 02681242) vol. 35 issue. 5 p. 55022-55022

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4538

公開URL: https://doi.org/10.1088/1361-6641/ab7843

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更新時刻: 2024-01-22 09:40:57 +0900

MDRでの公開時刻: 2024-01-22 12:30:19 +0900