ファイル種別: application/pdf キーワード: Ga2O3
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EB_alpha-GO_240422-2HQ(clean).pdf
Epitaxial Lateral Overgrowth of c-plane α-Ga2O3 using a stripe mask with ultra-narrow windows
ジャーナル論文
著者
Yuichi Oshima (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
ORCID SAMURAI ;
Takashi Shinohe (author) (この著者で検索)
FLOSFIA INC.
キーワード
Ga2O3, dislocation, HVPE, ELO
刊行年月日
2025-05-19
更新時刻
2025-05-21 16:30:09 +0900
055207_1_5.0260753-2-8.pdf
Fabrication of air bridges on (100) β-Ga2O3 using crystallographic HCl gas etching
ジャーナル論文
著者
ORCID SAMURAI ; ORCID SAMURAI
キーワード
Ga2O3, HCl gas etching, air bridge
刊行年月日
2025-05-01
更新時刻
2025-05-07 12:30:22 +0900
Epitaxial lateral overgrowth of m-plane -Ga2O3 by halide vapor phase epitaxy-1.pdf
Epitaxial lateral overgrowth of m -plane α-Ga 2 O 3 by halide vapor phase epitaxy
ジャーナル論文
著者
ORCID SAMURAI ;
Takashi Shinohe (author) (この著者で検索)
ORCID
キーワード
Ga2O3, dislocation, ELO, HVPE
刊行年月日
2025-12-31
更新時刻
2025-04-23 12:30:12 +0900
Suplementary.pdf
Near-vertical plasma-free HCl gas etching on (011) β-Ga2O3
ジャーナル論文
著者
ORCID SAMURAI ; ORCID SAMURAI
キーワード
Ga2O3, crystallographic etching, (011)
刊行年月日
2025-01-01
更新時刻
2026-01-24 15:43:35 +0900
Maruzane_2025_J._Phys._D__Appl._Phys._58_03LT02.pdf
Luminescence properties of dislocations in α-Ga2O3
ジャーナル論文
著者
Mugove Maruzane (author) (この著者で検索)
ORCID ; ORCID SAMURAI ;
Olha Makydonska (author) (この著者で検索)
ORCID ;
Paul R Edwards (author) (この著者で検索)
ORCID ;
Robert W Martin (author) (この著者で検索)
ORCID ;
Fabien C-P Massabuau (author) (この著者で検索)
ORCID
キーワード
Ga2O3, dislocation
刊行年月日
2025-01-20
更新時刻
2024-11-13 08:31:40 +0900
Plasma-free anisotropic selective-area etching of -Ga2O3 using forming gas under atmospheric pressure_organized.pdf
Plasma-free anisotropic selective-area etching of β-Ga 2 O 3 using forming gas under atmospheric pressure
ジャーナル論文
著者
ORCID SAMURAI ;
Rie Togashi (author) (この著者で検索)
ORCID ; ORCID SAMURAI
キーワード
Ga2O3, forming gas, anisotropic etching, plasma-free process
刊行年月日
2024-12-31
更新時刻
2024-07-31 12:30:20 +0900
162102_1_5.0138736.pdf
Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
ジャーナル論文
著者
Takayoshi Oshima (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Yuichi Oshima (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI
キーワード
Ga2O3, etching, HCl
刊行年月日
2023-04-17
更新時刻
2024-05-29 08:30:12 +0900
nohighlight_Si-K-Ga2O3_resubmit_2403011908_revYY.pdf
Photoelectron holographic study for atomic site occupancy for Si dopants in Si-doped κ-Ga2O3(001)
ジャーナル論文
著者
Yuhua Tsai (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group
ORCID ;
Yusuke Hashimoto (author) (この著者で検索)
NAIST
;
ZeXu Sun (author) (この著者で検索)
NAIST
;
Takuya Moriki (author) (この著者で検索)
NAIST
;
Takashi Tadamura (author) (この著者で検索)
NAIST
;
Takahiro Nagata (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group
ORCID SAMURAI ;
Piero Mazzolini (author) (この著者で検索)
University of Parma
;
Antonella Parisini (author) (この著者で検索)
University of Parma
;
Matteo Bosi (author) (この著者で検索)
IMEM-CNR
;
Luca Seravalli (author) (この著者で検索)
IMEM-CNR
;
Tomohiro Matsushita (author) (この著者で検索)
NAIST
;
Yoshiyuki Yamashita (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group
ORCID SAMURAI
キーワード
Ga2O3, κ-Ga2O3
刊行年月日
2024-04-03
更新時刻
2025-03-07 12:30:11 +0900
nohighlight_Sn_dopedGa2O3_240222_v2_revYY.pdf
Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)
ジャーナル論文
著者
Yuhua Tsai (author) (この著者で検索)
National Institute for Materials Science
ORCID ;
Masaaki Kobata (author) (この著者で検索)
ORCID ;
Tatsuo Fukuda (author) (この著者で検索)
ORCID ;
Hajime Tanida (author) (この著者で検索)
ORCID ;
Toru Kobayashi (author) (この著者で検索)
;
Yoshiyuki Yamashita (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI
キーワード
Ga2O3, dopant, b-Ga2O3
刊行年月日
2024-03-11
更新時刻
2024-03-19 12:30:20 +0900
042110_1_5.0186319.pdf
Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches
ジャーナル論文
著者
Takayoshi Oshima (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials
ORCID SAMURAI ;
Yuichi Oshima (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials
ORCID SAMURAI
キーワード
Ga2O3, (-102), selective area growth, selective area etching
刊行年月日
2024-01-22
更新時刻
2025-01-25 12:30:12 +0900