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説明:

In this study, we dry etched SiO2-masked (001) b-Ga2O3 substrates in HCl gas flow at a high temperature without plasma excitation. The etching was done selectively in window areas to form holes or trenches with inner sidewalls of (100) and/or {310} facets, which are the smallest surface-energy-density plane and oxygen-close-packed slip planes, respectively. In particular, (100) faceted sidewalls were flat and relatively close to the substrate surface normal. Therefore, this simple dry etching method is promising for fabricating plasma-damage-free trenches and fins used for b-Ga2O3-based power devices.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Ga2O3, etching, HCl

刊行年月日: 2023-04-17

出版者: AIP Publishing

掲載誌:

• APPLIED PHYSICS LETTERS (ISSN: 00036951) vol. 122 issue. 16 162102

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1063/5.0138736

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更新時刻: 2024-05-29 08:30:12 +0900

MDRでの公開時刻: 2024-05-29 08:30:12 +0900