Download all files (5.06 MB)

Collection

Citation

Description:

In this study, we dry etched SiO2-masked (001) b-Ga2O3 substrates in HCl gas flow at a high temperature without plasma excitation. The etching was done selectively in window areas to form holes or trenches with inner sidewalls of (100) and/or {310} facets, which are the smallest surface-energy-density plane and oxygen-close-packed slip planes, respectively. In particular, (100) faceted sidewalls were flat and relatively close to the substrate surface normal. Therefore, this simple dry etching method is promising for fabricating plasma-damage-free trenches and fins used for b-Ga2O3-based power devices.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: Ga2O3, etching, HCl

Date published: 2023-04-17

Publisher: AIP Publishing

Journal:

• APPLIED PHYSICS LETTERS (ISSN: 00036951) vol. 122 issue. 16 162102

Funding:

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1063/5.0138736

Related item:

Other identifier(s):

Contact agent:

Updated at: 2024-05-29 08:30:12 +0900

Published on MDR: 2024-05-29 08:30:12 +0900